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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION With TO-126 package High voltage ,high speed APPLICATIONS Particularly suited for 115V and 220V switchmode applications such as switching regulators,inverters ,motor controls,solenoid/ relay drivers and deflection circuits. PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION MJE13002 Absolute maximum ratings (Tc=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB IBM IE IEM PD Tj Tstg Collector-base voltage Collector-emitter voltage PARAMETER INC Emitter-base voltage Collector current (DC) E SEM ANG H Open base Open emitter OND IC CONDITIONS TOR UC VALUE 600 300 9 1.5 3 0.75 1.5 2.25 4.5 UNIT V V V A A A A A A W ae ae Open collector Collector current-Peak Base current Base current-Peak Emitter current Emitter current-Peak Total power dissipation Junction temperature Storage temperature TC=25ae 40 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance from junction to case MAX 3.12 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unles otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=10mA ;IB=0 IC=0.5A; IB=0.1A IC=1A; IB=0.25A TC=100ae IC=1.5A;IB=0.5A IC=0.5A; IB=0.1A IC=1A; IB=0.25A TC=100ae VCEV=Rated value; VBE (off) =1.5V TC=100ae VEB=9V; IC=0 IC=0.5A ; VCE=2V IC=1A ; VCE=2V MIN 300 MJE13002 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VCEsat-3 VBEsat-1 VBEsat-2 ICEV IEBO hFE-1 hFE-2 fT COB TYP. MAX UNIT V 0.5 1.0 1.0 3.0 1.0 1.2 1.1 1.0 5.0 V V V V V mA mA DC current gain Switching times resistive load td tr ts tf Delay time Rise time Storage time Fall time CHA IN Transition frequency Collector outoput capacitance E SEM NG IC=0.1A ; VCE=10V;f=1MHz IE=0;f=0.1MHz ; VCB=10V OND IC TOR UC 8 40 5 25 4 21 1.0 MHz pF 0.05 VCC=125V ,IC=1A IB1=-IB2=0.2A tp=25|I s duty cycleU 1% 0.5 2.0 0.4 0.1 1.0 4.0 0.7 |I |I |I |I s s s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE MJE13002 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions 3 |
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